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IGBT
SGL160N60UFD
Ultrafast IGBT
General Description
Features
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
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High speed switching
Low saturation voltage : V CE (sat) = 2.1 V @ I C = 80A
High input impedance
CO-PAK, IGBT with FRD: t rr = 75nS (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies.
C
G
G
C
E
TO-264
E
Absolute Maximum Ratings
T C = 25 ° C unless otherwise noted
Symbol
Description
SGL160N60UFD
Units
V CES
V GES
I C
I CM (1)
I F
I FM
P D
T J
T stg
T L
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T C = 25 ° C
@ T C = 100 ° C
@ T C =100 ° C
@ T C = 25 ° C
@ T C = 100 ° C
600
± 20
160
80
300
25
280
250
100
-55 to +150
-55 to +150
300
V
V
A
A
A
A
A
W
W
° C
° C
° C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R θ JC (IGBT)
R θ JC (DIODE)
R θ JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.5
0.83
25
Units
° C / W
° C / W
° C / W
?2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
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